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| Datasheet File OCR Text: |
| NPN SILICON HIGH FREQUENCY TRANSISTOR e DESCRIPTION: The ASI BFT51 is Designed for High Frequency Amplifier Applications. w w ta a D . w he S 4U t om .c BFT51F PACKAGE STYLE TO- 126 MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 500 mA 20 V 3.0 W @ TC = 25 C -65 C to +175 C -65 C to +175 C 20 K/W CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO BVEBO ICES HFE ft Ccb CC IC = 10 mA IC = 10 mA TC = 25 C TEST CONDITIONS RBE = 100 IC = 5.0 mA VCE = 10 V IC = 1.0 mA VCE = 5.0 V VCE = 5.0 V VCB = 5.0 V VCB = 5.0 V w w .D w IC = 100 mA IC = 300 mA IC = 300 mA t a S a e h t e U 4 .c m o NONE MINIMUM 10 19 20 3.0 TYPICAL MAXIMUM UNITS V V V V 100 40 50 f = 100 MHz f = 1.0 MHz f = 1.0 MHz 1.0 2.0 4.2 5.8 A A D V A N C E D S E M I C O N D U C T O R, I N C. w w Specifications are subject to change without notice. .D at Sh a ee 4U t --- om .c GHz Pf Pf REV. A 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 w 1/1 |
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